Datasheet Summary
55 V, N-channel Trench MOSFET
26 November 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 3 kV HBM
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Symbol VDS VGS ID
Quick reference data Parameter drain-source voltage gate-source voltage drain current
Static characteristics
RDSon...
