BSS138BKS
BSS138BKS is MOSFET manufactured by NXP Semiconductors.
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 1.5 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 320 m A; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 60 20 320 Unit V V m A
Static characteristics (per transistor) RDSon drain-source on-state resistance 1 1.6 Ω
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
60 V, 320 m A dual N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description
S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1
1 2 3
G1 G2
Simplified outline
6 5 4
Graphic symbol
D1
D2
SOT363 (TSSOP6)
S1 S2
017aaa256
3. Ordering information
Table 3. Ordering information Package Name BSS138BKS TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
4. Marking
Table 4. Marking codes Marking code[1] LG% Type number BSS138BKS
[1] % = placeholder for manufacturing site...
