Datasheet4U Logo Datasheet4U.com

BSS138P - MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS138P N-channel MOSFET nexperia
BSS138PS dual N-channel MOSFET nexperia
BSS138PW N-channel MOSFET nexperia
BSS138 N-Channel MOSFET Fairchild Semiconductor
BSS138 N-Channel MOSFET ON Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
BSS138PS MOSFET
BSS138PW MOSFET
BSS138BKS MOSFET
BSS84AKS MOSFET
BSS84AKW MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1.