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NXP Semiconductors Electronic Components Datasheet

BSS138P Datasheet

MOSFET

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BSS138P
60 V, 360 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ Low-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
VGS
ID
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 300 mA
Min Typ Max Unit
- - 60 V
- - ±20 V
[1] - - 360 mA
[2] -
0.9 1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.01.


NXP Semiconductors Electronic Components Datasheet

BSS138P Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
BSS138P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
Simplified outline Graphic symbol
3D
G
12
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BSS138P
TO-236AB plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes
Type number
BSS138P
[1] * = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
AN*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage
Tamb = 25 °C
-
VGS
gate-source voltage
Tamb = 25 °C
-
ID drain current
VGS = 10 V
[1]
Tamb = 25 °C
-
Tamb = 100 °C
-
IDM peak drain current
Tamb = 25 °C;
single pulse; tp 10 μs
-
Version
SOT23
Max Unit
60 V
±20 V
360 mA
230 mA
1.2 A
BSS138P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
2 of 16


Part Number BSS138P
Description MOSFET
Maker NXP Semiconductors
Total Page 16 Pages
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