900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BTA416Y Datasheet

Three-quadrant triacs

No Preview Available !

BTA416Y series B and C
16 A Three-quadrant triacs, insulated, high commutation, high
temperature
Rev. 01 — 3 October 2007
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.
1.2 Features
I Very high commutation performance
I Isolated mounting base
I High operating junction temperature
I High immunity to dV/dt
I 2500 V RMS isolation voltage
1.3 Applications
I Heating and cooking appliances
I High power motor control e.g. vacuum
cleaners
I Solid-state relays
I Non-linear rectifier-fed motor loads
I Electronic thermostats for heating and
cooling loads
1.4 Quick reference data
I VDRM 600 V (BTA416Y-600B and C)
I VDRM 800 V (BTA416Y-800B and C)
I ITSM 160 A (t = 20 ms)
I IGT 50 mA (BTA416Y series B)
I IGT 35 mA (BTA416Y series C)
I IT(RMS) 16 A
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
Simplified outline
mb
Symbol
T2
sym051
T1
G
123
SOT78D (TO-220)


NXP Semiconductors Electronic Components Datasheet

BTA416Y Datasheet

Three-quadrant triacs

No Preview Available !

NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs, insulated, high commutation, high temperature
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
Version
BTA416Y-600B
BTA416Y-600C
TO-220
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D
3-lead TO-220
www.DataSheeBt4TUA.4c1o6mY-800B
BTA416Y-800C
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
BTA416Y-600B; BTA416Y-600C
BTA416Y-800B; BTA416Y-800C
IT(RMS)
RMS on-state current
full sine wave; Tmb 108 °C; see
Figure 4 and 5
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t I2t for fusing
t = 10 ms
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms period
Min
[1] -
-
-
-
-
-
-
-
-
-
40
-
Max Unit
600 V
800 V
16 A
160 A
176 A
128 A2s
100 A/µs
2
5
0.5
+150
150
A
W
W
°C
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA416Y_SER_B_C_1
Product data sheet
Rev. 01 — 3 October 2007
© NXP B.V. 2007. All rights reserved.
2 of 12


Part Number BTA416Y
Description Three-quadrant triacs
Maker NXP Semiconductors
PDF Download

BTA416Y Datasheet PDF





Similar Datasheet

1 BTA41600B 40A standard TRIACs
ST Microelectronics
2 BTA416Y Three-quadrant triacs
NXP Semiconductors
3 BTA416Y-600B 3Q Hi-Com Triac
NXP
4 BTA416Y-600B 3Q Hi-Com Triac
WeEn
5 BTA416Y-600C 3Q Hi-Com Triac
WeEn
6 BTA416Y-600C Thyristor
INCHANGE
7 BTA416Y-600C 3Q Hi-Com Triac
NXP
8 BTA416Y-800B 3Q Hi-Com Triac
NXP
9 BTA416Y-800B 3Q Hi-ComTriac
WeEn





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy