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BUK7E2R3-40C - N-channel TrenchMOS standard level FET

General Description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

Key Features

  • AEC Q101 compliant.
  • Avalanche robust.
  • Suitable for standard level gate drive.
  • Suitable for thermally demanding environment up to 175°C rating 1.3.

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Full PDF Text Transcription for BUK7E2R3-40C (Reference)

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BUK7E2R3-40C N-channel TrenchMOS standard level FET Rev. 03 — 26 January 2009 www.DataSheet4U. Product data sheet 1. Product profile 1.1 General description Standard leve...

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ct data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width

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