BUK7E4R3-75C - N-channel TrenchMOS standard level FET

NXP Semiconductors

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

AEC Q101 compliant.
Suitable for standard level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

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BUK7E4R3-75C n-channel trenchmos standard level fet by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BUK7E4R3-75C
Manufacturer	NXP Semiconductors
File Size	332.30 KB
Description	N-channel TrenchMOS standard level FET
Datasheet	BUK7E4R3-75C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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I2P AK BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V, 24 V and 42 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.