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BUK7E5R2-100E

The BUK7E5R2-100E is N-channel TrenchMOS standard level FET designed by NXP Semiconductors.

Product Overview

NXP Semiconductors

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BUK7E5R2-100E N-channel TrenchMOS standard level FET by NXP Semiconductors - Datasheet Preview — Datasheet preview – BUK7E5R2-100E

Datasheet Details

Part number	BUK7E5R2-100E
Manufacturer	NXP Semiconductors
File Size	208.72 KB
Description	N-channel TrenchMOS standard level FET
Datasheet	BUK7E5R2-100E-NXPSemiconductors.pdf
Additional preview pages of the BUK7E5R2-100E datasheet.

Product details

Description

Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.

Features

AEC Q101 compliant.
Repetitive avalanche rated.
Suitable for thermally demanding environments due to 175 °C rating.
True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3.

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Published: Aug 23, 2014 |