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BUK96E3R2-40B - N-Channel MOSFET

Download the BUK96E3R2-40B datasheet PDF. This datasheet also covers the BUK95E3R2-40B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK95E3R2-40B-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
BUK96E04-40A N-Channel MOSFET
BUK9606-40B N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev. 04 — 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 100 A s RDSon = 2.7 mΩ (typ) s Ptot ≤ 300 W. 2.