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NXP Semiconductors Electronic Components Datasheet

NX7002AKS Datasheet

MOSFET

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NX7002AKS
60 V, dual N-channel Trench MOSFET
Rev. 1 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
1.3 Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 25 °C
[1]
Min Typ Max Unit
--
-20 -
--
60 V
20 V
170 mA
- 3 4.5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.


NXP Semiconductors Electronic Components Datasheet

NX7002AKS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
NX7002AKS
60 V, dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1 source TR1
G1 gate TR1
D2 drain TR2
S2 source TR2
G2 gate TR2
D1 drain TR1
Simplified outline
654
Graphic symbol
D1
123
SOT363 (TSSOP6)
G1
S1
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
NX7002AKS
TSSOP6
4. Marking
Description
plastic surface-mounted package; 6 leads
Table 4. Marking codes
Type number
NX7002AKS
[1] % = placeholder for manufacturing site code
Marking code[1]
TD%
D2
G2
S2
017aaa256
Version
SOT363
NX7002AKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
2 of 15


Part Number NX7002AKS
Description MOSFET
Maker NXP Semiconductors
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NX7002AKS Datasheet PDF






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