* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualifi
PBSS4032ND Datasheet (176.18 KB)
PBSS4032ND
NXP ↗ Semiconductors
176.18 KB
3.5a npn low vcesat (biss) transistor.
DataSheet.in PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 30 January 2010 Product data sheet 1. Product profile 1.1 Gen.
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