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PBSS4032ND - 3.5A NPN low VCEsat (BISS) transistor

Datasheet Summary

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PD.

Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet preview – PBSS4032ND

Datasheet Details

Part number PBSS4032ND
Manufacturer NXP Semiconductors
File Size 176.18 KB
Description 3.5A NPN low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4032ND Datasheet
Additional preview pages of the PBSS4032ND datasheet.

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Full PDF Text Transcription

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DataSheet.in PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD. 1.2 Features „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.
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