PBSS4032ND transistor equivalent, 3.5a npn low vcesat (biss) transistor.
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* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High colle.
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* DC-to-DC conversion Battery-driven devices Power management Charging circuits
1.4 Quick referen.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD.
1.2 Features
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* Low collector-emitter saturation.
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