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PBSS4032NT - 2.6A NPN low VCEsat (BISS) transistor

Datasheet Summary

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PT.

Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4032NT
Manufacturer NXP Semiconductors
File Size 208.68 KB
Description 2.6A NPN low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4032NT Datasheet
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Full PDF Text Transcription

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DataSheet.in PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT. 1.2 Features „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.
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