PBSS4032NT transistor equivalent, 2.6a npn low vcesat (biss) transistor.
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* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High colle.
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* DC-to-DC conversion Battery-driven devices Power management Charging circuits
1.4 Quick referen.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT.
1.2 Features
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* Low collector-emitter saturati.
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