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PBSS4032PD - 2.7A PNP low VCEsat (BISS) transistor

Datasheet Summary

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4032ND.

Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4032PD
Manufacturer NXP Semiconductors
File Size 208.11 KB
Description 2.7A PNP low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4032PD Datasheet
Additional preview pages of the PBSS4032PD datasheet.

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Full PDF Text Transcription

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DataSheet.in PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032ND. 1.2 Features „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.
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