* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Ci
PBSS4041NT Datasheet (206.75 KB)
PBSS4041NT
NXP ↗ Semiconductors
206.75 KB
3.8a npn low vcesat (biss) transistor.
DataSheet.in PBSS4041NT 60 V, 3.8 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 Gen.
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