* 600 mW total power dissipation
* Low collector-emitter saturation voltage
* High current capability
* Improved device reliability due to reduced heat generation
* Replaces two SOT23 packaged low VCEsat transistors on same PCB area
* Reduces required
PBSS4140DPN Datasheet (144.98 KB)
PBSS4140DPN
NXP ↗ Semiconductors
144.98 KB
40 v low vcesat npn/pnp transistor.
www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product specification 2.
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