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PBSS4140DPN - 40 V low VCEsat NPN/PNP transistor

Description

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX.

Features

  • 600 mW total power dissipation.
  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.
  • Replaces two SOT23 packaged low VCEsat transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs.

📥 Download Datasheet

Datasheet Details

Part number PBSS4140DPN
Manufacturer NXP Semiconductors
File Size 144.98 KB
Description 40 V low VCEsat NPN/PNP transistor
Datasheet download datasheet PBSS4140DPN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product specification 2001 Dec 13 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices).
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