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PBSS4140S - NPN transistor

General Description

NPN low VCEsat transistor in a SOT54 plastic package.

PNP complement: PBSS5140S.

Key Features

  • High power dissipation (830 mW).
  • Ultra low collector-emitter saturation voltage.
  • 1 A continuous current.
  • High current switching.
  • Improved device reliability due to reduced heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PBSS4140S 40 V low VCEsat NPN transistor Product data sheet Supersedes data of 2001 Nov 27 2004 Aug 20 NXP Semiconductors 40 V low VCEsat NPN transistor Product data sheet PBSS4140S FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat generation. APPLICATIONS • Medium power switching and muting • Linear regulators • DC/DC converter • LCD back-lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5140S.