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PBSS4140DPN - 40 V low VCEsat NPN/PNP transistor

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NXP Semiconductors

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PBSS4140DPN 40 V low VCEsat NPN/PNP transistor by NXP Semiconductors - Datasheet Preview — Datasheet preview – PBSS4140DPN

Datasheet Details

Part number	PBSS4140DPN
Manufacturer	NXP Semiconductors
File Size	144.98 KB
Description	40 V low VCEsat NPN/PNP transistor
Datasheet	PBSS4140DPN Datasheet
Additional preview pages of the PBSS4140DPN datasheet.

Product details

Description

TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX.

Features

600 mW total power dissipation.
Low collector-emitter saturation voltage.
High current capability.
Improved device reliability due to reduced heat generation.
Replaces two SOT23 packaged low VCEsat transistors on same PCB area.
Reduces required PCB area.
Reduced pick and place costs.

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Published: Oct 31, 2011 |