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PBSS4140T - NPN low transistor

General Description

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5140T.

1.

= p: made in Hong Kong.

= t: made in Malaysia.

= W: made in China.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capabilities.
  • Improved device reliability due to reduced heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PBSS4140T 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2005 Feb 14 2005 Feb 24 NXP Semiconductors 40 V, 1A NPN low VCEsat (BISS) transistor Product data sheet PBSS4140T FEATURES • Low collector-emitter saturation voltage • High current capabilities. • Improved device reliability due to reduced heat generation. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX.