Datasheet4U Logo Datasheet4U.com

PBSS4140V - 40 V low VCEsat NPN transistor

Description

NPN low VCEsat transistor with high current capability in a SOT666 plastic package.

PNP complement: PBSS5140V.

Features

  • 300 mW total power dissipation.
  • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package.
  • Improved thermal behaviour due to flat leads.
  • Excellent coplanarity due to straight leads.
  • Low collector-emitter saturation voltage.
  • High current capabilities.
  • Reduced required PCB area.

📥 Download Datasheet

Datasheet Details

Part number PBSS4140V
Manufacturer NXP Semiconductors
File Size 130.62 KB
Description 40 V low VCEsat NPN transistor
Datasheet download datasheet PBSS4140V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 20 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capabilities • Reduced required PCB area. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices).
Published: |