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PH9025L Datasheet

N-channel TrenchMOS logic level FET

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PH9025L
N-channel TrenchMOS logic level FET
Rev. 01 — 23 August 2007
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Logic level threshold
I Optimized for use in DC-to-DC
converters
I 100 % RG tested
1.3 Applications
I DC-to-DC converters
I Voltage regulators
I Lead-free package
I Very low switching and conduction
losses
I 100 % ruggedness tested
I Switched-mode power supplies
I PC Motherboards
1.4 Quick reference data
I VDS 25 V
I RDSon 9 m
I ID 66 A
I QGD = 2.7 nC (typ)
2. Pinning information
Table 1. Pinning
Pin Description
1, 2, 3 source (S)
4 gate (G)
mb mounting base; connected to drain (D)
Simplified outline
mb
1234
SOT669 (LFPAK)
Symbol
D
G
mbb076 S
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NXP Semiconductors Electronic Components Datasheet

PH9025L Datasheet

N-channel TrenchMOS logic level FET

No Preview Available !

NXP Semiconductors
PH9025L
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
PH9025L
LFPAK
Description
plastic single-ended surface-mounted package (lfpak); 4 leads
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; see Figure 3
Tmb = 25 °C; see Figure 1
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 33 A;
tp = 0.16 ms; VDS 25 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min
-
-
-
-
-
-
-
55
55
-
-
-
Version
SOT669
Max
25
25
±20
66
48
240
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°C
°C
52 A
208 A
55 mJ
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PH9025L_1
Product data sheet
Rev. 01 — 23 August 2007
© NXP B.V. 2007. All rights reserved.
2 of 12


Part Number PH9025L
Description N-channel TrenchMOS logic level FET
Maker NXP Semiconductors
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PH9025L Datasheet PDF






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