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PH9930L - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • I Logic level threshold I Optimized for use in DC-to-DC converters I 100 % RG tested I Lead-free package I Very low switching and conduction losses I 100 % ruggedness tested 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PH9930L N-channel TrenchMOS logic level FET Rev. 01 — 23 August 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Logic level threshold I Optimized for use in DC-to-DC converters I 100 % RG tested I Lead-free package I Very low switching and conduction losses I 100 % ruggedness tested 1.3 Applications I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I PC motherboards 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 9.9 mΩ I ID ≤ 63 A I QGD = 3.2 nC (typ) 2. Pinning information Table 1.