Datasheet Summary
N-channel TrenchMOS logic level FET
Rev. 01
- 23 August 2007 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Logic level threshold I Optimized for use in DC-to-DC converters I 100 % RG tested I Lead-free package I Very low switching and conduction losses I 100 % ruggedness tested
1.3 Applications
I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I PC Motherboards
1.4 Quick reference data
I VDS ≤ 25 V I RDSon ≤ 9 mΩ I ID ≤ 66 A I QGD = 2.7 nC (typ)
2. Pinning information
Table 1. Pin 1, 2, 3 4 mb Pinning...