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PMK30EP - P-channel TrenchMOS extremely low level FET

General Description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance 1.3 Applications „ Battery management „ Load switching 1.4 Quick reference data Table 1.