PMZB950UPE

The PMZB950UPE is P-channel Trench MOSFET designed by NXP Semiconductors.

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PMZB950UPE
Manufacturer	NXP Semiconductors
File Size	224.12 KB
Description	P-channel Trench MOSFET
Datasheet	PMZB950UPE-NXPSemiconductors.pdf
Additional preview pages of the PMZB950UPE datasheet.

Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω 3.

📁 Similar Datasheet

PMZB950UPEL - P-channel MOSFET (nexperia)
PMZB1200UPE - P-channel Trench MOSFET (NXP)
PMZB150UNE - N-channel Trench MOSFET (NXP)
PMZB170VNE - 12V N-channel Trench MOSFET (nexperia)
PMZB200UNE - N-channel Trench MOSFET (NXP)
PMZB220VPE - 12V P-channel Trench MOSFET (nexperia)
PMZB290UNE2 - N-channel Trench MOSFET (NXP)
PMZB320UPE - P-channel Trench MOSFET (NXP)

Other Datasheets by NXP Semiconductors

PMZB290UN - single N-channel Trench MOSFET
PMZB290UNE - single N-channel Trench MOSFET
PMZB300XN - single N-channel Trench MOSFET
PMZB350UPE - single P-channel Trench MOSFET
PMZB370UNE - MOSFET
PMZB380XN - MOSFET

Published: Aug 23, 2014 |