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PSMN4R8-100BSE Datasheet

MOSFET

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PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
12 April 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of
NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-
swap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses
3. Applications
Electronic fuse
Hot swap
Load switch
Soft start
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
IDM
peak drain current
pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 4
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 707 A
- - 405 W
- 4.1 4.8 mΩ
- 59 83 nC
- 196 278 nC
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NXP Semiconductors Electronic Components Datasheet

PSMN4R8-100BSE Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
Symbol
Parameter
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Typ Max Unit
- - 542 mJ
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G gate
mb
D drain[1]
S source
D mounting base; connected to
drain
2
13
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN4R8-100BSE D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
7. Marking
Table 4. Marking codes
Type number
PSMN4R8-100BSE
Marking code
PSMN4R8-100BSE
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
PSMN4R8-100BSE
All information provided in this document is subject to legal disclaimers.
Product data sheet
12 April 2013
Min Max Unit
- 100 V
- 100 V
-20 20
V
© NXP B.V. 2013. All rights reserved
2 / 13


Part Number PSMN4R8-100BSE
Description MOSFET
Maker NXP Semiconductors
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PSMN4R8-100BSE Datasheet PDF





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