Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
1 160NTD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 160 350 5100 120
Units A A A kA.
Full PDF Text Transcription for 160NTD (Reference)
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160NTD. For precise diagrams, and layout, please refer to the original PDF.
Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures...
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vation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 1 160NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 160 350 5100 120 Units A A A kA s M3 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values
160NTD Datasheet
