Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
56NTT
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 56 130 1300 8000
Units A A A As
M1 P.
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Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperat...
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assivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 56NTT Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 56 130 1300 8000 Units A A A As M1 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -