Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
70NTT
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 70 160 1500 11
Units A A A kA s
M1.
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Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperat...
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assivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 70NTT Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms 2 Symbol IF(AV) IF(RMS) IFSM It 2 Values 70 160 1500 11 Units A A A kA s M1 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -