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N04L163WC1A Datasheet 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Manufacturer: NanoAmp Solutions

Datasheet Details

Part number N04L163WC1A
Manufacturer NanoAmp Solutions
File Size 295.70 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Download N04L163WC1A Download (PDF)

Overview

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L163WC1A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 4.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 2.