N04L163WC1C Description
1982 Zanker Road, San Jose, CA 95112 ph: Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.
N04L163WC1C Key Features
- Single Wide Power Supply Range 2.2 to 3.6 Volts
- Very low standby current 2.0µA at 3.0V (Typical)
- Very low operating current 1.5mA at 3.0V and 1µs (Typical)
- Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory
- Low voltage data retention Vcc = 1.5V
- Very fast output enable access time 25ns OE access time
- Automatic power down to standby mode
- TTL patible three-state output driver
- pact space saving BGA package available
- Ultra Low Power Sort Available
N04L163WC1C Applications
- Single Wide Power Supply Range 2.2 to 3.6 Volts