N04L163WC1C Datasheet | NanoAmp Solutions

Overview The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using Nano Amp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N04L163WC1C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40o C to +85o C and is available in JEDEC standard packages patible with other standard 256Kb x 16 SRAMs. Features - Single Wide Power Supply Range 2.2 to 3.6 Volts - Very low standby current 2.0µA at 3.0V (Typical) - Very low operating current 1.5m A at 3.0V and 1µs (Typical) - Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion - Low voltage data retention Vcc = 1.5V - Very fast output enable access time 25ns OE access time - Automatic power down to standby mode - TTL patible three-state output driver - pact space saving BGA package available - Ultra Low Power Sort Available Product Family Part Number N04L163WC1CZ1 N04L163WC1CT1 Package Type VFBGA Pb-Free 44-TSOP II Pb-Free Operating Temperature -40o C to +85o C Power Supply (Vcc) 2.2V - 3.6V Speed Options 55ns Standby Operating Current Current (ISB), Typical (Icc), Typical 2 µA 1.5 m A @ 1MHz Pin Configurations A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A12 Pin Descriptions 1 A B C D E F G H LB I/O8 I/O9 VSS...