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N04L1618C2A Datasheet 4mb Ultra-low Power Asynchronous CMOS Sram

Manufacturer: NanoAmp Solutions

Datasheet Details

Part number N04L1618C2A
Manufacturer NanoAmp Solutions
File Size 277.52 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N04L1618C2A_NanoAmpSolutions.pdf

N04L1618C2A Overview

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N04L1618C2A .. 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed...

N04L1618C2A Key Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts
  • Very low standby current 0.5µA at 1.8V (Typical)
  • Very low operating current 0.7mA at 1.8V and 1µs (Typical)
  • Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
  • Low voltage data retention Vcc = 1.2V
  • Very fast output enable access time 25ns OE access time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • pact space saving BGA package available

N04L1618C2A Applications

  • Single Wide Power Supply Range 1.65 to 2.2 Volts

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N04L1618C2A Distributor