N04L1618C2A Overview
Suite 220, Milpitas, CA 95035 ph: 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.
N04L1618C2A Key Features
- Single Wide Power Supply Range 1.65 to 2.2 Volts
- Very low standby current 0.5µA at 1.8V (Typical)
- Very low operating current 0.7mA at 1.8V and 1µs (Typical)
- Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)
- Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
- Low voltage data retention Vcc = 1.2V
- Very fast output enable access time 25ns OE access time
- Automatic power down to standby mode
- TTL patible three-state output driver
- pact space saving BGA package available
N04L1618C2A Applications
- Single Wide Power Supply Range 1.65 to 2.2 Volts