N04L1618C2A Datasheet | NanoAmp Solutions

Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using Nano Amp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as Nano Amp’s N04L163WC1A, which is processed to operate at higher voltages. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40o C to +85o C and is available in JEDEC standard packages patible with other standard 256Kb x 16 SRAMs Features - Single Wide Power Supply Range 1.65 to 2.2 Volts - Very low standby current 0.5µA at 1.8V (Typical) - Very low operating current 0.7m A at 1.8V and 1µs (Typical) - Low Page Mode operating current 0.5m A at 1.8V and 1µs (Typical) - Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion - Low voltage data retention Vcc = 1.2V - Very fast output enable access time 25ns OE access time - Automatic power down to standby mode - TTL patible three-state output driver - pact space saving BGA package available Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed 70ns @ 1.8V -40 o C Standby Operating Current (ISB), Current (Icc), Typical Typical 0.7 m A @ 1MHz N04L1618C2AB - BGA to +85o C 1.65V - 2.2V N04L1618C2AB2 48-BGA Green 85ns @ 1.65V 0.5 µA (DOC# 14-02-016 REV G ECN# 01-1266) The specifications of this device are subject to change without notice. For latest documentation see http://.nanoamp.. Nano Amp Solutions, Inc....