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N04M163WL1A - 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

General Description

1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write En

Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 4.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Special processing for Soft E.

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Datasheet Details

Part number N04M163WL1A
Manufacturer NanoAmp Solutions
File Size 276.35 KB
Description 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
Datasheet download datasheet N04M163WL1A Datasheet

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04M163WL1A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit Overview The N04M163WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N04M1618L2A, which has further reliability processing for life-support (Class 3) medical applications.