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N04Q16YYC2B - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Datasheet Summary

Description

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS VSSQ NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Pow

Features

  • Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V 2.3V - 2.7V 2.7V - 3.6V.
  • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ 2.5V Vcc with 3V VccQ.
  • Very low standby current 50nA typical for 1.2V operation.
  • Very low operating current 400µA typical for 1.2V operation at 1µs.
  • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs.
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte contr.

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Datasheet Details

Part number N04Q16YYC2B
Manufacturer NanoAmp Solutions
File Size 332.96 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04Q16yyC2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.
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