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N08L083WC2C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

General Description

Stock No.

23379-A The specifications of this device are subject to change without notice.

Key Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 1.5mA at 3.0V and 1µs(Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.5V.
  • Very fast output enable access time 25ns OE access time.
  • Automatic power down to standby mode.

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Datasheet Details

Part number N08L083WC2C
Manufacturer NanoAmp Solutions
File Size 243.63 KB
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N08L083WC2C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L083WC2C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 8 bit Overview The N08L083WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 1,048,576 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N08L083WC2C is optimal for various applications where low-power is critical such as battery backup and hand-held devices.