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N08M163WL1A - 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit

Description

4 A1 A4 A6 A7 A16 A15 A13 A10 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enab

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 4.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Special processing for Soft E.

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Datasheet Details

Part number N08M163WL1A
Manufacturer NanoAmp Solutions
File Size 263.33 KB
Description 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08M163WL1A www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit Overview The N08M163WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N08M1618L2A, which has further reliability processing for life-support (Class 3) medical applications.
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