N08T1630CXB (NanoAmp Solutions)
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N08T1630CxB
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(30 views)
MX29F800B (Macronix International)
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
PRELIMINARY
MX29F800T/B
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
FEATURES
• 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5
(24 views)
MX29F800T (Macronix International)
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
PRELIMINARY
MX29F800T/B
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
FEATURES
• 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5
(24 views)
KM23C8100DT (Samsung Semiconductor)
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8100D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(wor
(24 views)
N08M163WL1A (NanoAmp Solutions)
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N08M163WL1A
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(23 views)
KM23V8105D (Samsung semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
KM23V8105D(G)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access
(22 views)
KM23C8105DT (Samsung Semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8105D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word
(22 views)
KM23C8105DG (Samsung Semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8105D(G)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word
(22 views)
EM680FU16A (Emerging Memory & Logic Solutions)
512Kx16 SRAM
EM680FU16A Series
Low Power, 512Kx16 SRAM
Document Title
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
www.DataSheet4U.com
Revision Hi
(22 views)
29F800 (Macronix International)
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
PRELIMINARY
MX29F800T/B
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
FEATURES
• 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5
(17 views)
KM23C8105DET (Samsung Semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8105D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word
(17 views)
KM23C8100ET (Samsung Semiconductor)
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8100D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(wor
(17 views)
KM23C8100DET (Samsung Semiconductor)
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8100D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(wor
(17 views)
KM23C8105D (Samsung Semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8105D(G)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word
(17 views)
K6X8016C3B (Samsung semiconductor)
512Kx16 bit Low Power Full CMOS Static RAM
K6X8016C3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
0.1
(16 views)
KM23V8105G (Samsung semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
KM23V8105D(G)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access
(16 views)
HY62LF16804A (Hynix)
512Kx16bit full CMOS SRAM
www.DataSheet4U.com
HY62LF16804A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM
Revision His
(16 views)
HY29F800 (Hynix Semiconductor)
8 Megabit (1Mx8/512Kx16)/ 5 Volt-only/ Flash Memory
HY29F800
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(15 views)
K6X8016T3B (Samsung semiconductor)
512Kx16 bit Low Power Full CMOS Static RAM
K6X8016T3B Family
CMOS SRAM
512Kx16 bit Low Power Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS • Organization: 512K x16 • Power Su
(15 views)
KM23C8105ET (Samsung Semiconductor)
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
www.DataSheet4U.com
KM23C8105D(E)T
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word
(15 views)
