HY62UF16806A Datasheet - Hynix Semiconductor

HY62UF16806A 512Kx16bit full CMOS SRAM

and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.03 /Mar. 2002 Hynix Semiconductor HY62UF16806A DESCRIPTION The HY62UF16806A is a high speed, super low power and 8Mbit full CMOS SR.

www.DataSheet4U.com HY62UF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix Change DC Parameter - Isb1(LL) : 40uA à - Isb1(Typ) : 8uA à - Icc : 5mA à - Icc1(1us) : 8mA à - Icc1(Min) : 50mA à Change Data Retention - IccDR(LL) : 25uA à Change AC Parameter - tOE : 35ns à : 40ns à - tCW : 50ns à - tAW : 50ns à - tBW : 50ns à - tWP : 45ns à - tCHZ : 30ns.

HY62UF16806A Features

* Fully static operation and Tri-state output

* TTL compatible inputs and outputs

* Battery backup(LL/SL-part) - 1.2V(min) data retention

* Standard pin configuration - 48-uBGA Operation Current/Icc(mA) 4 4 Standby Current(uA) LL SL 25 8 25 8 Temperature (°C) 0~70

HY62UF16806A Datasheet (191.67 KB)