HY62LF16806A Datasheet - Hynix Semiconductor

HY62LF16806A 512Kx16bit full CMOS SRAM

and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 /Jan. 2002 Hynix Semiconductor HY62LF16806A Series DESCRIPTION The HY62LF16806A is a high speed, super low power and 8Mbit full .

www.DataSheet4U.com HY62LF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix Change DC Parameter - Isb1(LL) : 30uA à - Isb1(Typ) : 8uA à - Icc1(1us) : 5mA à Change Data Retention - IccDR(LL) : 25uA à Change AC Parameter - tOE : 40ns à 25uA 1uA 4mA 15uA 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary 02 Jan.28.2002 This document is .

HY62LF16806A Features

* Fully static operation and Tri-state output

* TTL compatible inputs and outputs

* Battery backup(LL/SL-part) - 1.2V(min) data retention

* Standard pin configuration - 48-uBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 30 8 30 8 Temperature (°C) 0~70

HY62LF16806A_HynixSemiconductor.pdf