K6T8016C3M Datasheet (Samsung semiconductor) - 512Kx16 bit Low Power CMOS Static RAM

K6T8016C3M, 512Kx16 bit Low Power CMOS Static RAM

The K6T8016C3M families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support industrial operating temperature ranges for user flexibility of system design.

The families also support low data retention voltage for battery back-up operation with low data retention current

K6T8016C3M Family Document Title 512Kx16 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No.

History 0.0 1.0 Initial draft Finalize - Adopt New Code system.

- Improve VIN, VOUT max.

on A ’ BSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V.

Errata correction Draft Date June 18, 1999 February 29, 2000 Remark Advance Final www.DataSheet4U.com 1.01 April 17, 2000 Final The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

reserve the right t