K6T8016C3M - 512Kx16 bit Low Power CMOS Static RAM

Datasheet Summary

Description

The K6T8016C3M families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support industrial operating temperature ranges for user flexibility of system design.

Features

Process Technology: TFT.
Organization: 512K x16.
Power Supply Voltage: 4.5~5.5V.
Low Data Retention Voltage: 2.0V(Min).
Three state output and TTL Compatible.
Package Type: 44-TSOP2-400F/R CMOS SRAM.

Samsung semiconductor

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Datasheet Details

Part number	K6T8016C3M
Manufacturer	Samsung semiconductor
File Size	143.37 KB
Description	512Kx16 bit Low Power CMOS Static RAM
Datasheet	K6T8016C3M Datasheet
Additional preview pages of the K6T8016C3M datasheet.

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Full PDF Text Transcription

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K6T8016C3M Family Document Title 512Kx16 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V. Errata correction Draft Date June 18, 1999 February 29, 2000 Remark Advance Final www.DataSheet4U.com 1.01 April 17, 2000 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.

Published: Jul 2, 2008 |