K6T1008V2C Datasheet | Samsung Semiconductor

FEATURES - Process Technology: 0.4 µm CMOS - Organization: 128K x8 - Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V - Low Data Retention Voltage: 2V(Min) - Three state output and TTL patible - Package Type: 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-0813.4F/R CMOS SRAM .. GENERAL DESCRIPTION The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family K6T1008V2C-B K6T1008U2C-B K6T1008V2C-D K6T1008U2C-D K6T1008V2C-F K6T1008U2C-F Industrial(-40~85°C) Extended(-25~85°C) Operating Temperature Vcc Range 3.0~3.6V 2.7~3.3V 3.0~3.6V 2.7~3.3V 3.0~3.6V 2.7~3.3V Speed 70/100ns 85/100ns 70/100ns 85/100ns 70/100ns 85/100ns 10µ A 35m A 32-SOP 32-TSOP1-F/R 32-s TSOP1-F/R Standby (ISB1, Max) Operating (ICC2, Max) PKG Type mercial(0~70°C) PIN DESCRIPTION A11 A9 A8 A13 WE VCC CS2 A15 A15 VCC CS2 NC A16 WE A14 A12 A13 A7 A6 A8 A5 A9 A4 A11 OE A4 A5 A6 CS1 A7 I/O8 A12 A14 I/O7 A16 NC I/O6 VCC I/O5 A15 CS2 I/O4 WE A13 A8 A9 A11 A10 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS I/O4 I/O5 I/O6 I/O7 I/O8 CS1 A10 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 A4 A5 A6 A7 A8 A12 A13 A14 A15 A16 32-TSOP 32-STSOP Type1-Forward VCC VSS Memory array 1024 rows 128 ×8 columns Row select 32-SOP 25 24 23 22 21 20 19 18...