| Part number | K6T1008C2C |
|---|---|
| Datasheet | K6T1008C2C-Samsungsemiconductor.pdf |
| File Size | 185.75 KB |
| Manufacturer | Samsung Semiconductor |
| Description | CMOS SRAM |
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K6T1008C2C Family Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Initial draft 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 35mA 1.0 Finalized - Add 70ns speed bin for mercial product and 85ns speed bin for industrial.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K6T1008C2E | CMOS SRAM |
| K6T1008U2C | 128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T1008V2C | 128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T0808C1D | CMOS SRAM |
| K6T0808U1D | CMOS SRAM |
| K6T0808V1D | CMOS SRAM |
| K6T2008S2A | 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
| K6T2008S2M | 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
| K6T2008U2A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T2008V2A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
