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K6T1008C2E Datasheet

Manufacturer: Samsung Semiconductor
K6T1008C2E datasheet preview

Datasheet Details

Part number K6T1008C2E
Datasheet K6T1008C2E-Samsungsemiconductor.pdf
File Size 162.48 KB
Manufacturer Samsung Semiconductor
Description CMOS SRAM
K6T1008C2E page 2 K6T1008C2E page 3

K6T1008C2E Overview

K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Design target 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.

K6T1008C2E Key Features

  • Process Technology: TFT
  • Organization: 128Kx8
  • Power Supply Voltage: 4.5~5.5V
  • Low Data Retention Voltage: 2V(Min)
  • Three state o
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