Datasheet4U Logo Datasheet4U.com

K6T1008C2E - CMOS SRAM

Key Features

  • Process Technology: TFT.
  • Organization: 128Kx8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state o.

📥 Download Datasheet

Full PDF Text Transcription for K6T1008C2E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6T1008C2E. For precise diagrams, and layout, please refer to the original PDF.

K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Design target 1.0 Finalize - Improve tWP form 55ns to 50ns...

View more extracted text
History 0.0 Design target 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. 1.01 Errata correction 2.0 Revise 3.0 Revise - Add 55ns parts to industrial products. CMOS SRAM Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final December 1, 1999 February 14, 2000 March 3, 2000 Final Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch o

More Datasheets from Samsung Semiconductor

Part Number Description
K6T1008C2C CMOS SRAM
K6T1008U2C 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T0808C1D CMOS SRAM
K6T0808U1D CMOS SRAM
K6T0808V1D CMOS SRAM
K6T2008S2A 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
K6T2008S2M 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
K6T2008U2A 256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A 256Kx8 bit Low Power and Low Voltage CMOS Static RAM