K6T1008C2E - CMOS SRAM

Datasheet Summary

Features

Process Technology: TFT.
Organization: 128Kx8.
Power Supply Voltage: 4.5~5.5V.
Low Data Retention Voltage: 2V(Min).
Three state o.

Samsung semiconductor

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Datasheet Details

Part number	K6T1008C2E
Manufacturer	Samsung semiconductor
File Size	162.48 KB
Description	CMOS SRAM
Datasheet	K6T1008C2E Datasheet
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K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Design target 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. 1.01 Errata correction 2.0 Revise 3.0 Revise - Add 55ns parts to industrial products. CMOS SRAM Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final December 1, 1999 February 14, 2000 March 3, 2000 Final Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 3.

Published: Dec 8, 2017 |