| Part number | K6T0808C1D |
|---|---|
| Datasheet | K6T0808C1D-Samsungsemiconductor.pdf |
| File Size | 168.67 KB |
| Manufacturer | Samsung Semiconductor |
| Description | CMOS SRAM |
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Replace test load 100pF to 50pF for 55ns part CMOS SRAM Draft Data May 18, 1997 April 1, 1997 Remark Design target Preliminily November 11, 1997 Final The attached datasheets are provided by SAMSUNG Electroni.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K6T0808U1D | CMOS SRAM |
| K6T0808V1D | CMOS SRAM |
| K6T1008C2C | CMOS SRAM |
| K6T1008C2E | CMOS SRAM |
| K6T1008U2C | 128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T1008V2C | 128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T2008S2A | 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
| K6T2008S2M | 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
| K6T2008U2A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T2008V2A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
