K6T0808C1D Datasheet | Samsung Semiconductor

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8p F, CIO = 8 → 10p F - KM62256D-4/5/7 Family t OH = 5 → 10ns - KM62256DL/DLI IDR = 50→30µA KM62256DL-L/DLI-L IDR = 30 → 15µA 1.0 Finalize - Remove ICC write value - Improved operating current ICC2 = 70 → 60m A - Improved standby current KM62256DL/DLI ISB1 = 50 → 30µA KM62256DL-L ISB1 = 10 → 5µA KM62256DLI-L ISB1 = 15 → 5µA - Improved data retention current KM62256DL/DLI IDR = 30 → 5µA KM62256DL-L/DLI-L IDR = 15 → 3µA - Remove 45ns part from mercial product and 100ns part from industrial product. Replace test load 100p F to 50p F for 55ns part CMOS SRAM Draft Data May 18, 1997 April 1, 1997 Remark Design target Preliminily November 11, 1997 Final The attached datasheets are provided by SAMSUNG...