K6T1008U2C Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	K6T1008U2C
Datasheet	K6T1008U2C K6T1008V2C Datasheet (PDF)
File Size	172.38 KB
Manufacturer	Samsung Semiconductor
Description	128K x8 bit Low Power and Low Voltage CMOS Static RAM

K6T1008U2C Overview

The K6T1008V2C and K6T1008U2C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.

K6T1008U2C Key Features

Process Technology: 0.4 µm CMOS
Organization: 128K x8
Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL patible
Package Type: 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-0813.4F/R

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number	Description
K6T1008C2C	CMOS SRAM
K6T1008C2E	CMOS SRAM
K6T1008V2C	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T0808C1D	CMOS SRAM
K6T0808U1D	CMOS SRAM
K6T0808V1D	CMOS SRAM
K6T2008S2A	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
K6T2008S2M	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
K6T2008U2A	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A	256Kx8 bit Low Power and Low Voltage CMOS Static RAM

Datasheet Details

K6T1008U2C Overview

K6T1008U2C Key Features

More Datasheets from Samsung Semiconductor

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