K6T0808V1D - CMOS SRAM

Samsung semiconductor

Datasheet Details

Part number	K6T0808V1D
Manufacturer	Samsung semiconductor
File Size	149.68 KB
Description	CMOS SRAM
Datasheet	K6T0808V1D Datasheet
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K6T0808V1D, K6T0808U1D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft 1.0 Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W Draft Data April 1, 1997 November 12, 1997 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and products.

Published: Mar 19, 2018 |