K6T8008C2M - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM

Description

The K6T8008C2M families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support industrial operating temperature ranges for user flexibility of system design.

Features

Process Technology: TFT.
Organization: 1M x8.
Power Supply Voltage: 4.5~5.5V.
Low Data Retention Voltage: 2.0V(Min).
Three state output and TTL Compatible.
Package Type: 44-TSOP2-400F/R CMOS SRAM.

Samsung semiconductor

📥 Download Datasheet

Datasheet Details

Part number	K6T8008C2M
Manufacturer	Samsung semiconductor
File Size	143.59 KB
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM
Datasheet	K6T8008C2M Datasheet
Additional preview pages of the K6T8008C2M datasheet.

📁 Similar Datasheet

Other Datasheets by Samsung semiconductor

K6T8016C3M - 512Kx16 bit Low Power CMOS Static RAM
K6T0808C1D - CMOS SRAM
K6T0808U1D - CMOS SRAM
K6T0808V1D - CMOS SRAM
K6T1008C2C - CMOS SRAM
K6T1008C2E - CMOS SRAM
K6T1008U2C - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C - 128K x8 bit Low Power and Low Voltage CMOS Static RAM

Full PDF Text Transcription

Click to expand full text

K6T8008C2M Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V. - Change Icc: from 12 to 10mA - Change Icc1: from 10 to 12mA Draft Date June 22, 1999 February 29, 2000 Remark Advance Final www.DataSheet4U.com The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.

Published: Jul 2, 2008 |