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K5P2880YCM Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

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Description

K5P2880YCM - T085 Document Title Multi-Chip Package MEMORY 128M Bit (16Mx8) Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History.
The K5P2880YCM featuring single 3.

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Datasheet Specifications

Part number
K5P2880YCM
Manufacturer
Samsung semiconductor
File Size
552.68 KB
Datasheet
K5P2880YCM_Samsungsemiconductor.pdf
Description
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM

Features

* and specifications including FAQ, please refer to Samsung’ s web site. http://samsungelectronics. com/semiconductors/products/products_index. html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO. , LTD. reserve the right to change the specifications. SAM

Applications

* and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 8Mbit SRAM supports the low data retention voltage for battery backup operation with low current. The K5P2880YCM is suitable for use in data memory of mobil communication system to reduce

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