HY62SF16806A Datasheet (Hynix Semiconductor)

HY62SF16806A, 512Kx16bit full CMOS SRAM

www.DataSheet4U.com HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix AC Parameter is changed - tCHZ : 30ns > 20ns - tBHZ : 30ns > 20ns - tOHZ : 30ns > 20ns Change DC Parameter - Icc1(1us) : 5mA à 4mA Change Data Retention - IccDR(LL) : 25uA à 15uA Change AC Parameter - tOE : 40ns à 35ns@70ns Draft Date Apr.10.2001 A

HY62SF16806A Features

* Fully static operation and Tri-state output

* TTL compatible inputs and outputs The HY62SF16806A is a high speed, super low

* Battery backup(LL/SL-part) power and 8Mbit full CMOS SRAM organized as - 1.2V(min) data retention 524,288 words by 16bits. The HY62SF16806A