N08T1630CXB
Overview
The N08T1630Cx B is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08T1630Cx B is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40o C to +85o C and is available in JEDEC standard BGA and TSOP2 packages patible with other standard 512Kb x 16 SRAMs.
Features
- Single Wide Power Supply Range 2.7 to 3.6...
