N08T1630CXB Description
Suite 220, Milpitas, CA 95035 ph: 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit Overview The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS.
N08T1630CXB Key Features
- Single Wide Power Supply Range 2.7 to 3.6 Volts
- Very low standby current 70µA at 3.0V (Max)
- Very low operating current 2.0mA at 3.0V and 1µs (Typical)
- Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
- Very fast access time 55ns address access option 30ns OE access time
- Automatic power down to standby mode
- TTL patible three-state output driver
- Green package option for TSOP and BGA
- BGA Green 48
- BGA 44- TSOP2 Green 44- TSOP2
N08T1630CXB Applications
- Single Wide Power Supply Range 2.7 to 3.6 Volts