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N16L163WC2C Datasheet Preview

N16L163WC2C Datasheet

16Mb Ultra-Low Power Asynchronous CMOS SRAM

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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N16L163WC2C
Advance Information
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1024K × 16 bit
Overview
Features
The N16L163WC2C is an integrated memory
device containing a 8Mbit Static Random Access
Memory organized as 1,048,576 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16L163WC2C is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 1024Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.5µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs(Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available
Part Number
N16L163WC2CT1
N16L163WC2CZ1
Package Type
48 TSOP I Pb-Free
VFBGA Pb-Free
Operating
Temperature
Power
Supply (Vcc)
Speed
-40oC to +85oC 2.2V - 3.6V 55ns
Standby
Current
(ISB),
Typical
Operating Current
(Icc), Typical
2.5 µA 2 mA @ 1MHz
Stock No. 23383-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1




NanoAmp Solutions

N16L163WC2C Datasheet Preview

N16L163WC2C Datasheet

16Mb Ultra-Low Power Asynchronous CMOS SRAM

No Preview Available !

www.DataSheet4U.com
NanoAmp Solutions, Inc.
Pin Configuration
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 CE2
A4 CE1 I/O0
A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 DNU A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8 A9 A10 A11 DNU
48 Pin VFBGA (top)
8 x 10 mm
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
DNU
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Note: Pin#47 on the TSOP-I Package must be tied to Vcc.
Pin Descriptions
Pin Name
A0-A19
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
DNU
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Do Not Use
N16L163WC2C
Advance Information
48-Pin
TSOP-I
48 A16
47 Vcc*
46 Vss
45 I/O15
44 I/O7
43 I/O14
42 I/O6
41 I/O13
40 I/O5
39 I/O12
38 I/O4
37 Vcc
36 I/O11
35 I/O3
34 I/O10
33 I/O2
32 I/O9
31 I/O1
30 I/O8
29 I/O0
28 OE
27 Vss
26 CE1
25 A0
Stock No. 23383-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2


Part Number N16L163WC2C
Description 16Mb Ultra-Low Power Asynchronous CMOS SRAM
Maker NanoAmp Solutions
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