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NT5DS128M4BT - (NT5DSxxMxBx) 512Mb DDR SDRAM

General Description

NT5DS128M4BF, NT5DS128M4BT, NT5DS64M8BF, NT5DS64M8BT, NT5DS32M16BF and NT5DS32M16BT are die B of 512Mb SDRAM devices based using DDR interface.

They are all based on Nanya’s 110 nm design process.

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Key Features

  • CAS Latency and Frequency CAS Latency 2 2.5 3 Maximum Operating Frequency (MHz) DDR400 DDR333 DDR266B (5T) (6K) (75B) 133 100 166 166 133 200 -.
  • DDR 512M bit, die B, based on 110nm design rules.
  • Double data rate architecture: two data transfers per clock cycle.
  • Bidirectional data strobe (DQS) is transmitted and received with data, to be us.

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Datasheet Details

Part number NT5DS128M4BT
Manufacturer Nanya Techology
File Size 2.36 MB
Description (NT5DSxxMxBx) 512Mb DDR SDRAM
Datasheet download datasheet NT5DS128M4BT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NT5DS128M4BF / NT5DS128M4BT/ NT5DS128M4BG (Green) / NT5DS128M4BS (Green) NT5DS64M8BF / NT5DS64M8BT/ NT5DS64M8BG (Green) / NT5DS64M8BS (Green) NT5DS32M16BF / NT5DS32M16BT / NT5DS32M16BG (Green) / NT5DS32M16BS (Green) 512Mb DDR SDRAM Features CAS Latency and Frequency CAS Latency 2 2.